Improvements in or relating to silicon-planar transistors

  • Inventors:
  • Assignees: Siemens Ag
  • Publication Date: February 28, 1973
  • Publication Number: GB-1308415-A

Abstract

1308415 Semi-conductor devices SIEMENS AG 28 July 1971 [8 Sept 1970] 35462/71 Heading H1K A Si planar transistor, having layers of PtSi or PdSi disposed between Al base and emitter contacts and their respective regions, is produced by diffusing-in the base and emitter regions using the planar process, opening contact windows in the oxide layer, spraying or vaporizing a layer of Pt or Pd over the surface, heating to form silicide layers in the contact windows, etching to remove the unconverted metal on the oxide surface, evaporating-on a layer of Al and masking and etching to form the required contacts.

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