Epitaxial composite and method of making


1319560 Epitaxial III-V film NORTH AMERICAN ROCKWELL CORP 4 June 1970 7566/73 Divided out of 1139311 Heading C1A An epitaxial film of a Group III-V compound on a monocrystalline sapphire (α-Al 2 O 3 ) substrate whose surface orientation is (0001), (1123), (0112), 1125), or (1126), or is about 10‹ from the (0112) plane, may be produced by introducing one or more gaseous Group V hydrides or alkyls and one or more gaseous Group III alkyls into a reactor containing the heated substrate. The orientation of the film may be (111) or (110). Binary and mixed compounds are exemplified. The reactants may be Me 3 Ga, Et 3 Ga, Me 3 Al, Et 3 Al, Me 3 In, Et 3 In, Ph 3 , Me 3 P, AsH 3 , Me 3 As, SbH 3 , Me 3 Sb, and may be introduced under reduced pressure in a carrier gas, e.g. H 2 , He, Ar, N 2 , with the Group V compound in excess. Small amounts of e.g. AsCl 3 and/or HCl may be present. The substrate may be placed on a SiC-coated C pedestal heated by RF induction to 650-800‹ C. The film may be doped during formation by introducing e.g. H 2 Se or H 2 S (n-type), Me 2 Zn, Et 2 Zn or Me 2 Cd (p-type). Multilayers of different Group III-V compounds may be formed.




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Cited By (6)

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    DE-3635279-A1May 07, 1987Japan Res Dev Corp, Junichi NishizawaGasphasen-epitaxieverfahren fuer einen verbindungs-halbleiter-einkristall und einrichtung zur durchfuehrung des verfahrens
    EP-0097772-A2January 11, 1984International Business Machines CorporationStructure comportant un substrat monocristallin portant une couche de matériau semi-conducteur pour un dispositif
    EP-0097772-A3June 04, 1986International Business Machines CorporationStructure comprising a monocrystalline substrate supporting a device layer of semiconductor material
    US-4214926-AJuly 29, 1980Tdk Electronics Co., Ltd.Method of doping IIb or VIb group elements into a boron phosphide semiconductor
    US-4716130-ADecember 29, 1987American Telephone And Telegraph Company, At&T Bell LaboratoriesMOCVD of semi-insulating indium phosphide based compositions
    US-5064684-ANovember 12, 1991Eastman Kodak CompanyWaveguides, interferometers, and methods of their formation