Planar type semiconductor devices

  • Inventors:
  • Assignees: Hitachi Ltd
  • Publication Date: July 25, 1973
  • Publication Number: GB-1324944-A

Abstract

1324944 Transistors HITACHI Ltd 25 June 1971 [26 June 1970] 30022/71 Heading H1K The transistor structure shown is formed by the deposition of a silicon nitride mask on a portion 3, 4 of the surface of silicon body 1 and the remainder of the surface is then oxidized to produce oxide film 2. After removal of the nitride, base region 3 is formed by diffusion and a further oxide mask (not shown) is used to permit the formation of the diffused emitter region 4. In a variant the emitter region is centrally disposed in the base region.

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